Minority-Carrier Lifetime and Surface Recombination Velocity in Single-Crystal CdTe

Separation of Carrier Lifetime from Interface Recombination Velocity

Low surface recombination velocity in solution-grown CH3NH3PbBr3 perovskite single crystal

Organic-inorganic hybrid perovskites are attracting intense research effort due to their impressive performance in solar cells. While the carrier transport parameters such as mobility and bulk carrier lifetime shows sufficient characteristics, the surface recombination, which can have major impact on the solar cell performance, has not been studied. Here we measure surface recombination dynamic...

Minority carrier lifetime and surface effects in VLS-grown axial p-n junction silicon nanowires.

High aspect ratio p–n junction semiconductors have displayed great potential for emerging photovoltaics owing to enhanced properties such as improved light absorption or trapping effi ciency and facile carrier collection. [ 1–4 ] In the case of bottomup synthesized p–n junction nanowires, additional advantages come from their single-crystalline structure and reduced materials usage, coupled wit...

Effects of Dislocation Walls on Charge Carrier Transport Properties in CdTe Single Crystal

Radiation detectors for medical imaging at room temperature have been developed thanks to the availability of large chlorine-doped cadmium telluride (CdTe:Cl) crystals. Microstructural defects affect the performance of CdTe:Cl radiation detectors. Advanced characterization tools, such as Ion Beam Induced Current (IBIC) measurements and chemical etching on tellurium and cadmium faces were used t...

Minority Carrier Lifetime in Beryllium - Doped InAs / InAsSb Strained Layer

Minority Carrier Lifetime in Beryllium-Doped InAs/InAsSb Strained Layer Superlattices Report Title Minority carrier lifetimes in undoped and Beryllium-doped Type-2 Ga-free, InAs/InAsSb strained layer superlattices (SLS) with energy gaps as low as 0.165 eV were determined from photoluminescence kinetics. The minority carrier lifetime of 450 ns at 77 K in the undoped SLS confirms a high material ...